本代碼是基于OFDM系統(tǒng)的一種轉(zhuǎn)換域估計(jì)算法，有整個(gè)OFDM系統(tǒng)及改進(jìn)的信道估計(jì)算法仿真。包括LS,MMSE,LMMSE,DFT,及改進(jìn)后的DCT算法。
上傳時(shí)間： 2014-01-25
上傳用戶：王者A
一個(gè)4*4mimo通信系統(tǒng)的仿真，qpsk調(diào)制，用mmse自適應(yīng)解調(diào)，畫出了ber曲線
標(biāo)簽： mimo 通信系統(tǒng) 仿真
上傳時(shí)間： 2017-07-19
上傳用戶：lvzhr
自適應(yīng)均衡器設(shè)計(jì)，采用分?jǐn)?shù)間隔、判決反饋結(jié)構(gòu)，MMSE算法。
標(biāo)簽： 均衡器
上傳時(shí)間： 2014-01-13
上傳用戶：xinyuzhiqiwuwu
是一個(gè)對mimo連續(xù)相位調(diào)制系統(tǒng)的均衡程序，利用MMSE準(zhǔn)則來實(shí)現(xiàn)。
標(biāo)簽： mimo 相位調(diào)制 均衡
上傳時(shí)間： 2013-12-22
上傳用戶：aix008
用VB編寫的一個(gè)小程序，使用GPRS連接WAP服務(wù)程序，具有GPRS功能的便攜電話，并可支持圖形、聲音、游戲(jar/sic)下載，并有完整的日志功能。連接后會(huì)列出文件，選中文件可以刪除、增加等。
上傳時(shí)間： 2013-12-20
上傳用戶：Altman
ofdm通信系統(tǒng)信道估計(jì)，采用ls和mmse方法實(shí)現(xiàn)
標(biāo)簽： ofdm 通信系統(tǒng) 信道估計(jì)
上傳時(shí)間： 2017-08-18
上傳用戶：chens000
ZF檢測算法，MMSE以及ML,OSIC的檢測算法仿真，MATLAB
上傳時(shí)間： 2016-03-29
上傳用戶：ronaldoshiwo
松下2015年最新研究的適用于SiC，GaN等大功率器件的封裝材料介紹
上傳時(shí)間： 2016-04-20
上傳用戶：吉林輝仔
The recent developments in full duplex (FD) commu- nication promise doubling the capacity of cellular networks using self interference cancellation (SIC) techniques. FD small cells with device-to-device (D2D) communication links could achieve the expected capacity of the future cellular networks (5G). In this work, we consider joint scheduling and dynamic power algorithm (DPA) for a single cell FD small cell network with D2D links (D2DLs). We formulate the optimal user selection and power control as a non-linear programming (NLP) optimization problem to get the optimal user scheduling and transmission power in a given TTI. Our numerical results show that using DPA gives better overall throughput performance than full power transmission algorithm (FPA). Also, simultaneous transmissions (combination of uplink (UL), downlink (DL), and D2D occur 80% of the time thereby increasing the spectral efficiency and network capacity
標(biāo)簽： Full-Duplex Cells Small
上傳時(shí)間： 2020-05-27
上傳用戶：shancjb
GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.
標(biāo)簽： GaN-on-Si Displace and SiC Si
上傳時(shí)間： 2020-06-07
上傳用戶：shancjb
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