Abstract: Some power architectures require the power supply sequencer (or system manager) to controldownstream power MOSFETS to allow power to flow into branch circuits. This application note explains howsystem power sequencing and level shifting can be accomplished using a low-voltage system manager
高的工作電壓高達(dá)100V N雙N溝道MOSFET同步驅(qū)動(dòng) The D810DCDC is a synchronous step-down switching regulator controller that can directly step-down voltages from up to 100V, making it ideal for telecom and automotive applications. The D810DCDC uses a constant on-time valley current control architecture to deliver very low duty cycles with accurate cycle-by-cycle current limit, without requiring a sense resistor. A precise internal reference provides 0.5% DC accuracy. A high bandwidth (25MHz) error amplifi er provides very fast line and load transient response. Large 1Ω gate drivers allow the D810DCDC to drive multiple MOSFETS for higher current applications. The operating frequency is selected by an external resistor and is compensated for variations in VIN and can also be synchronized to an external clock for switching-noise sensitive applications. Integrated bias control generates gate drive power from the input supply during start-up and when an output shortcircuit occurs, with the addition of a small external SOT23 MOSFET. When in regulation, power is derived from the output for higher effi ciency.
Easy-to-use and compact point-of-load power suppliesare necessary in systems with widely distributed, highcurrent, low voltage loads. The LTC®3415 provides acompact, simple and versatile solution. It includes a pairof integrated complementary power MOSFETS (32mΩtop and 25mΩ bottom) and requires no external senseresistor. A complete design requires an inductor andinput/output capacitors, and that’s it. The result is a fast,constant frequency, 7A current mode DC/DC switchingregulator.
These are P-Channel enhancement mode silicon gate
power fi eld effect transistors. They are advanced power
MOSFETS designed, tested, and guaranteed to withstand a
specifi ed level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETS are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for other
high-power switching devices. The high input impedance
allows these types to be operated directly from integrated
circuits.
The PW2312 is a high frequency, synchronous, rectified, step-down, switch-mode converter withinternal power MOSFETS. It offers a very compact solution to achieve a 1.5A peak output currentover a wide input supply range, with excellent load and line regulation.The PW2312 requires a minimal number of readily available, external components and is available ina space saving SOT23-6 package.
The PW8205A8TS is the highest performance trench N-ch MOSFETS with extreme high cell density,which provide excellent RDSON and gate charge for most of the small power switching and loadswitch applications. The meet the RoHS and Product requirement with full function reliabilityapproved .
The GL823K integrates a high speed 8051 microprocessor and a high efficiency hardware engine for the best data transfer performance between USB and flash card interfaces. Its pin assignment design fits to card sockets to provide easier PCB layout. Inside the chip, it integrates 5V to 3.3V regulator, 3.3V to 1.8V regulator and power MOSFETS and it enables the function of on-chip clock source (OCCS) which means no external 12MHz XTAL is needed and that effectively reduces the total BOM cost.
