Recently a new technology for high voltage Power MOSfetshas been introduced – the CoolMOS™ . Based on thenew device concept of charge compensation the RDS(on) areaproduct for e.g. 600V transistors has been reduced by afactor of 5. The devices show no bipolar current contributionlike the well known tail current observed during the turn-offphase of IGBTs. CoolMOS™ virtually combines the lowswitching losses of a MOSfet with the on-state losses of anIGBT.
This application note is an overview discussion of theLinear Technology SPICE macromodel library. It assumeslittle if any prior knowledge of this software library or itshistory. However, it does assume familiarity with both theanalog simulation program SPICE (or one of its manyderivatives), and modern day op amps, including bipolar,JFET, and MOSfet amplifier technologies
