These are P-channel enhancement mode silicon gate power fi eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specifi ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.
標簽： enhancement transistors P-channel are
上傳時間： 2017-02-17
上傳用戶：aeiouetla
AEC-Q100 qualified ? 12 V and 24 V battery systems compliance ? 3.3 V and 5 V logic compatible I/O ? 8-channel configurable MOSFET pre-driver – High-side (N-channel and P-channel MOS) – Low-side (N-channel MOS) – H-bridge (up to 2 H-bridge) – Peak & Hold (2 loads) ? Operating battery supply voltage 3.8 V to 36 V ? Operating VDD supply voltage 4.5 V to 5.5 V ? All device pins, except the ground pins, withstand at least 40 V ? Programmable gate charge/discharge currents for improving EMI behavior
標簽： configurable Automotive pre-driver suitable channel systems MOSFET fully High side
上傳時間： 2019-03-27
上傳用戶：guaixiaolong
Capacity and Random-Coding Exponents for Channel Coding with Side Information （P.moulin關于信息隱藏容量的論文2006年）
標簽： Random-Coding Information Exponents Capacity
上傳時間： 2013-12-19
上傳用戶：cc1
Program to simulate Rayleigh fading using a p-th order autoregressive model AR(p) according to ％ Baddour s work: "Autoregressive modeling for fading channel simulation"
標簽： autoregressive according simulate Rayleigh
上傳時間： 2013-12-02
上傳用戶：tb_6877751
The Capacity of a MIMO channel with nt transmit antenna and nr recieve antenna is analyzed. The power in parallel channel (after decomposition) is distributed as water-filling algorithm
標簽： antenna The Capacity analyzed
上傳時間： 2016-02-01
上傳用戶：225588
化學[手冊]_《化學工程師簡明手冊》鄧忠等[p]
上傳時間： 2013-04-15
上傳用戶：eeworm
海爾29F3A-P
上傳時間： 2013-06-19
上傳用戶：eeworm
專輯類-機械五金類專輯-84冊-3.02G 化學[手冊]_《化學工程師簡明手冊》鄧忠等[p].pdf
上傳時間： 2013-07-28
上傳用戶：lifangyuan12
[信號與系統(全美經典學習指導系列)].(美)Hwei.P.Hsu.掃描版 很清晰，經典教材
上傳時間： 2013-04-24
上傳用戶：Pzj
在理論模型的基礎上探討了電子勢壘的形狀以及勢壘形狀隨外加電壓的變化, 并進行定量計算, 得出隧穿電壓隨雜質摻雜濃度的變化規律。所得結論與硅、鍺p-n 結實驗數據相吻合, 證明了所建立的理論模型在定量 研究p-n 結的隧道擊穿中的合理性與實用性。該理論模型對研究一般材料或器件的隧道擊穿具有重要的借鑒意義。
上傳時間： 2013-10-31
上傳用戶：summery
