注冊機分為三部分，分別為PartA,PartB,PartC
此注冊機支持的軟件如下：（2011年07月17日最新版）
PartA：
IAR Embedded Workbench For MSC-51 v8.10
IAR Embedded Workbench For Atmel AVR v5.51
IAR Embedded Workbench For Atmel AVR32 v3.31
IAR Embedded Workbench For ARM v6.21
IAR Embedded Workbench For Renesas M16C and R8C v3.50
IAR Embedded Workbench For NEC 78K v4.71
IAR Embedded Workbench For MSP430 v5.30
IAR Embedded Workbench For Samsung SAM8 v3.10A
PartB：
IAR Embedded Workbench For Dallas Semiconductor/Maxim MAXQ v2.30
IAR Embedded Workbench For NEC V850 v3.80
IAR Embedded Workbench For Renesas M32C v3.30
IAR Embedded Workbench For CR16C v3.10
IAR Embedded Workbench For Renesas R32C v1.31
IAR Embedded Workbench For Microchip PIC18 v3.10A
IAR Embedded Workbench For Microchip dsPIC v1.40A
IAR Embedded Workbench For Renesas RX v2.30
PartC：
IAR Embedded Workbench For ColdFire v1.23
IAR Embedded Workbench For HCS12 v3.20
IAR Embedded Workbench For HCS08 v1.20
IAR Embedded Workbench For STM8 v1.30
IAR Embedded Workbench For Renesas SuperH v2.10
IAR Embedded Workbench For Renesas H8 v2.30
IAR Embedded Workbench For Renesas RL78 v1.10
截止目前，IAR官網上24款軟件，只剩“Embedded Workbench for MK5 v1.25A”無法完成注冊
當注冊機運行于vista或者WIN7的系統下時，請右鍵點擊然后使用管理員模式運行，或者將系統的UAC功能關閉后運行。
此注冊機針對的是IAR官網上下載的EV版（評估板），至于從其他渠道獲得的CD版或者FULL版的軟件，沒有測試。
本注冊機僅限測試和學習IAR系列軟件之用，請勿用于商業用途。請勿在網絡上隨意傳播。
版本更新說明：
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20110717版：
更新 IAR Embedded Workbench For NEC 78K v4.71
更新 IAR Embedded Workbench For MSP430 v5.30
更新 IAR Embedded Workbench For Renesas RX v2.30
更新 IAR Embedded Workbench For Renesas H8 v2.30
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20110714版：
更新 IAR Embedded Workbench For ARM v6.21
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20110527版：
更新 IAR Embedded Workbench For MSC-51 v8.10
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20110512版：
更新 IAR Embedded Workbench For ARM v6.20
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20110414版：
增加 IAR Embedded Workbench For Renesas RL78 v1.10
更新 IAR Embedded Workbench For Dallas Semiconductor/Maxim MAXQ v2.30
更新 IAR Embedded Workbench For NEC V850 v3.80
更新 IAR Embedded Workbench For CR16C v3.10
更新 IAR Embedded Workbench For Renesas M32C v3.30
更新 IAR Embedded Workbench For STM8 v1.30
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20110224版：
更新 IAR Embedded Workbench For HCS08 v1.20
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20110122版：
更新 IAR Embedded Workbench For Renesas RX v2.20
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20101218版：
更新 IAR Embedded Workbench For MSP430 v5.20
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20101206版：
更新 IAR Embedded Workbench For ARM v6.10
更新 IAR Embedded Workbench For Atmel AVR v5.51
更新 IAR Embedded Workbench For Atmel AVR32 v3.31
更新 IAR Embedded Workbench For ColdFire v1.23
更新 IAR Embedded Workbench For NEC 78K v4.70
更新 IAR Embedded Workbench For Renesas M16C and R8C v3.50
更新 IAR Embedded Workbench For STM8 v1.20
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20100803版：
更新 IAR Embedded Workbench For MSC-51 v7.60
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20100615版：
更新 IAR Embedded Workbench For Renesas RX v2.10
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20100430版：
更新 IAR Embedded Workbench For Atmel AVR v5.50
更新 IAR Embedded Workbench For Renesas R32C v1.31
----------------------------------------------------------------------------------------------------------
20100429版：
增加 Embedded Workbench For Renesas SuperH v2.10
----------------------------------------------------------------------------------------------------------
20100428版：
增加 IAR Embedded Workbench For STM8 v1.10
更新 IAR Embedded Workbench For ARM v5.50
更新 IAR Embedded Workbench For MSP430 v5.10
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20100425版：
初始版本建立
Radio frequency (RF) power amplifiers are used in everyday life for many applica-
tions including cellular phones, magnetic resonance imaging, Semiconductor wafer
processing for chip manufacturing, etc. Therefore, the design and performance of
RF amplifiers carry great importance for the proper functionality of these devices.
Furthermore, several industrial and military applications require low-profile yet
high-powered and efficient power amplifiers.
An optical fiber amplifier is a key component for enabling efficient transmission of
wavelength-divisionmultiplexed(WDM)signalsoverlongdistances.Eventhough
many alternative technologies were available, erbium-doped fiber amplifiers won
theraceduringtheearly1990sandbecameastandardcomponentforlong-haulopti-
caltelecommunicationssystems.However,owingtotherecentsuccessinproducing
low-cost, high-power, Semiconductor lasers operating near 1450 nm, the Raman
amplifiertechnologyhasalsogainedprominenceinthedeploymentofmodernlight-
wavesystems.Moreover,becauseofthepushforintegratedoptoelectroniccircuits,
Semiconductor optical amplifiers, rare-earth-doped planar waveguide amplifiers,
and silicon optical amplifiers are also gaining much interest these days.
Contamination and electrostatic discharge (ESD) are now becoming recognized as factors
affecting yield and reliability in an ever-increasing number of industries. Whereas contam-
ination traditionally was recognized as affecting the Semiconductor, disk drive, aerospace,
pharmaceutical, and medical device industries, today such industries as automobile and
food production are also discovering the benefits of contamination control. ESD control
has experienced a similar growth in applications.
Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability
of electronic components. It is an event in which a finite amount of charge is trans-
ferred from one object (i.e., human body) to another (i.e., microchip). This process
can result in a very high current passing through the microchip within a very short
period of time, and, hence, more than 35% of chip damages can be attributed to an
ESD-related event. As such, designing on-chip ESD structures to protect integrated
circuits against the ESD stresses is a high priority in the Semiconductor industry.
Dear Reader, this book project brings to you a unique study tool for ESD
protection solutions used in analog-integrated circuit (IC) design. Quick-start
learning is combined with in-depth understanding for the whole spectrum of cross-
disciplinary knowledge required to excel in the ESD field. The chapters cover
technical material from elementary Semiconductor structure and device levels up
to complex analog circuit design examples and case studies.
In the seven years since the first edition of this book was completed, Electrostatic
Discharge (ESD) phenomena in integrated circuits (IC) continues to be important
as technologies shrink and the speed and size of the chips increases. The phenom-
ena related to ESD events in Semiconductor devices take place outside the realm of
normal device operation. Hence, the physics governing this behavior are not typ-
ically found in general textbooks on Semiconductors.
The goal of this book is to introduce the simulation methods necessary to describe
the behaviour of Semiconductor devices during an electrostatic discharge (ESD).
The challenge of this task is the correct description of Semiconductor devices under
very high current density and high temperature transients. As it stands, the book
can be no more than a snapshot and a summary of the research in this field
during the past few years. The authors hope that the book will provide the basis
for further development of simulation methods at this current frontier of device
physics.
The challenges associated with the design and implementation of Electro-
static Discharge (ESD) protection circuits become increasingly complex as
technology is scaled well into nano-metric regime. One must understand the
behavior of Semiconductor devices under very high current densities, high
temperature transients in order to surmount the nano-meter ESD challenge.
As a consequence, the quest for suitable ESD solution in a given technology
must start from the device level. Traditional approaches of ESD design may
not be adequate as the ESD damages occur at successively lower voltages in
nano-metric dimensions.
This text, ESD Basics: From Semiconductor Manufacturing to Product Use was initiated on
the need to produce a text that addresses fundamentals of electrostatic discharge from the
manufacturing environment to today’s products. As the manufacturing world evolves, semi-
conductor networks scale, and systems are changing, the needs and requirements for reliabi-
lity and ESD protection are changing. A text is required that connects basic ESD phenomena
to today’s real world environment.
