Fluid Flow in Micron and Submicron Size Channels
標(biāo)簽： Submicron Channels Micron Fluid
上傳時(shí)間： 2017-09-09
上傳用戶：edisonfather
Introduction to Xilinx Packaging Electronic packages are interconnectable housings for semiconductor devices. The major functions of the electronic packages are to provide electrical interconnections between the IC and the board and to efficiently remove heat generated by the device. Feature sizes are constantly shrinking, resulting in increased number of transistors being packed into the device. Today's Submicron technology is also enabling large-scale functional integration and system-on-a-chip solutions. In order to keep pace with these new advancements in silicon technologies, semiconductor packages have also evolved to provide improved device functionality and performance. Feature size at the device level is driving package feature sizes down to the design rules of the early transistors. To meet these demands, electronic packages must be flexible to address high pin counts, reduced pitch and form factor requirements. At the same time,packages must be reliable and cost effective.
上傳時(shí)間： 2013-10-22
上傳用戶：ztj182002
Introduction to Xilinx Packaging Electronic packages are interconnectable housings for semiconductor devices. The major functions of the electronic packages are to provide electrical interconnections between the IC and the board and to efficiently remove heat generated by the device. Feature sizes are constantly shrinking, resulting in increased number of transistors being packed into the device. Today's Submicron technology is also enabling large-scale functional integration and system-on-a-chip solutions. In order to keep pace with these new advancements in silicon technologies, semiconductor packages have also evolved to provide improved device functionality and performance. Feature size at the device level is driving package feature sizes down to the design rules of the early transistors. To meet these demands, electronic packages must be flexible to address high pin counts, reduced pitch and form factor requirements. At the same time,packages must be reliable and cost effective.
上傳時(shí)間： 2013-11-21
上傳用戶：不懂夜的黑
The emphasis of this book is on real-time application of Synopsys tools, used to combat various problems seen at VDSM geometries. Readers will be exposed to an effective design methodology for handling complex, Submicron ASIC designs. Significance is placed on HDL coding styles, synthesis and optimization, dynamic simulation, formal verification, DFT scan insertion, links to layout, physical synthesis, and static timing analysis. At each step, problems related to each phase of the design flow are identified, with solutions and work-around described in detail. In addition, crucial issues related to layout, which includes clock tree synthesis and back-end integration (links to layout) are also discussed at length. Furthermore, the book contains in-depth discussions on the basics of Synopsys technology libraries and HDL coding styles, targeted towards optimal synthesis solution.
標(biāo)簽： application real-time Synopsys emphasis
上傳時(shí)間： 2017-07-05
上傳用戶：waitingfy
Electrostatic discharge (ESD) events can have serious detrimental effects on the manufacture and performance of microelectronic devices, the systems that contain them, and the manufacturing facilities used to produce them. Submicron device technologies, high system operating speeds, and factory automation are making ESD control programs a critical factor in the quality and reliability of ESD-sensitive products.
標(biāo)簽： Management Program ESD
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
在互補(bǔ)式金氧半(CMOS)積體電路中，隨著量產(chǎn)製程的演進(jìn)，元件的尺寸已縮減到深次微 米(deep-Submicron)階段，以增進(jìn)積體電路(IC)的性能及運(yùn)算速度，以及降低每顆晶片的製造 成本。但隨著元件尺寸的縮減，卻出現(xiàn)一些可靠度的問題。 在次微米技術(shù)中，為了克服所謂熱載子(Hot-Carrier)問題而發(fā)展出 LDD(Lightly-Doped Drain) 製程與結(jié)構(gòu); 為了降低 CMOS 元件汲極(drain)與源極(source)的寄生電阻(sheet resistance) Rs 與 Rd，而發(fā)展出 Silicide 製程; 為了降低 CMOS 元件閘級(jí)的寄生電阻 Rg，而發(fā)展出 Polycide 製 程 ; 在更進(jìn)步的製程中把 Silicide 與 Polycide 一起製造，而發(fā)展出所謂 Salicide 製程
標(biāo)簽： Protection CMOS ESD ICs in
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
在互補(bǔ)式金氧半(CMOS)積體電路中，隨著量產(chǎn)製程 的演進(jìn)，元件的尺寸已縮減到深次微米(deep-Submicron)階 段，以增進(jìn)積體電路(IC)的性能及運(yùn)算速度，以及降低每 顆晶片的製造成本。但隨著元件尺寸的縮減，卻出現(xiàn)一些 可靠度的問題。
標(biāo)簽： ESD_Technology
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
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