本程序是對(duì)V-BLAST系統(tǒng)及其檢測(cè)算法的仿真，可采用BPSK,QPSK,16QAM,64QAM調(diào)制。檢測(cè)算法為ML，MMSE,ZF,以及采用迫零的連續(xù)干擾消除檢測(cè)算法。
標(biāo)簽： V-BLAST 程序 檢測(cè)算法 仿真
上傳時(shí)間： 2016-08-04
上傳用戶：ainimao
一個(gè)使用GPRS連接的WAP服務(wù)程序，支持具有GPRS功能的便攜電話，支持圖形、聲音、游戲(jar/sic)下載，并有完整日志記錄功能。
上傳時(shí)間： 2013-12-16
上傳用戶：miaochun888
多用戶檢測(cè)算法的比較，包括解相關(guān)、MMSE、SIC、PIC
上傳時(shí)間： 2014-01-24
上傳用戶：sjyy1001
Single Carrier FDMA又稱SC-FDMA或者DFT-Spread-OFDM是3GPP LTE最新提出的適用于上行傳輸?shù)囊环N新方案。相對(duì)于OFDMA（主要用于下行），其最大的優(yōu)勢(shì)在于低峰值平均功率比（即PAPR）。本程序包括OFDMA，SC-FDE（單載波頻域均衡）以及SC-FDMA程序，接收端采用經(jīng)典的ZF和MMSE檢測(cè)算法，程序短小精悍，相當(dāng)經(jīng)典，方便該領(lǐng)域的人學(xué)習(xí)與研究。
標(biāo)簽： DFT-Spread-OFDM Carrier SC-FDMA Single
上傳時(shí)間： 2016-10-07
上傳用戶：leehom61
用VB編寫的一個(gè)小程序，使用GPRS連接WAP服務(wù)程序，具有GPRS功能的便攜電話，并可支持圖形、聲音、游戲(jar/sic)下載，并有完整的日志功能。連接后會(huì)列出文件，選中文件可以刪除、增加等。
上傳時(shí)間： 2013-12-20
上傳用戶：Altman
資料仿真了瑞利信道下4*4 MIMO的ergodic capacity, 解碼端，MMSE接收端采用SIC和不采用SIC的仿真 I) Achievable capacity vs SNR for all schemes II) Ratio of Acvhievable capacity of each receiver to the MIMO capacity
標(biāo)簽： MIMO 信道容量
上傳時(shí)間： 2016-03-22
上傳用戶：1551148890
松下2015年最新研究的適用于SiC，GaN等大功率器件的封裝材料介紹
上傳時(shí)間： 2016-04-20
上傳用戶：吉林輝仔
The recent developments in full duplex (FD) commu- nication promise doubling the capacity of cellular networks using self interference cancellation (SIC) techniques. FD small cells with device-to-device (D2D) communication links could achieve the expected capacity of the future cellular networks (5G). In this work, we consider joint scheduling and dynamic power algorithm (DPA) for a single cell FD small cell network with D2D links (D2DLs). We formulate the optimal user selection and power control as a non-linear programming (NLP) optimization problem to get the optimal user scheduling and transmission power in a given TTI. Our numerical results show that using DPA gives better overall throughput performance than full power transmission algorithm (FPA). Also, simultaneous transmissions (combination of uplink (UL), downlink (DL), and D2D occur 80% of the time thereby increasing the spectral efficiency and network capacity
標(biāo)簽： Full-Duplex Cells Small
上傳時(shí)間： 2020-05-27
上傳用戶：shancjb
GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.
標(biāo)簽： GaN-on-Si Displace and SiC Si
上傳時(shí)間： 2020-06-07
上傳用戶：shancjb
電動(dòng)汽車、SiC功率管發(fā)展趨勢(shì)
標(biāo)簽： 智能電動(dòng)汽車
上傳時(shí)間： 2021-10-26
上傳用戶：
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