高溫超導(dǎo)（High Temperature Superconductor,HTS）磁陰電動(dòng)機(jī)與傳統(tǒng)磁陰電動(dòng)機(jī)相比，能夠以更小的體積和重量實(shí)現(xiàn)更大的輸出功率、更高的功率因數(shù)和效率.國(guó)外有關(guān)超導(dǎo)磁阻電動(dòng)機(jī)的研究目前還處于初級(jí)階段，國(guó)內(nèi)在這一領(lǐng)域更為滯后.論文以普通磁阻電動(dòng)機(jī)的電磁關(guān)系為基礎(chǔ)，結(jié)合超導(dǎo)材料特殊的電磁特性，初步提出了超導(dǎo)磁阻電動(dòng)機(jī)電磁設(shè)計(jì)的一般原則;并嘗試進(jìn)行了一臺(tái)額定功率為150W的內(nèi)反應(yīng)式HTS磁阻電動(dòng)機(jī)的電磁設(shè)計(jì).論文以實(shí)際設(shè)計(jì)的一臺(tái)內(nèi)反應(yīng)式HTS磁阻電動(dòng)機(jī)樣機(jī)作為分析實(shí)例，基于第二類超導(dǎo)體臨界態(tài)Kim模型和電磁場(chǎng)的有限元方法，提出了一般HTS磁阻電動(dòng)機(jī)的內(nèi)部磁場(chǎng)及交、直軸同步電抗的分析與計(jì)算方法.并在此基礎(chǔ)上進(jìn)一步研究了如何借助HTS磁阻電動(dòng)機(jī)的電抗曲線分析HTS磁阻電動(dòng)機(jī)的穩(wěn)態(tài)工作特性.論文對(duì)常規(guī)磁阻電動(dòng)機(jī)與HTS磁阻電動(dòng)機(jī)進(jìn)行了比較.計(jì)算結(jié)果表明，在電機(jī)尺寸、結(jié)構(gòu)不變的前提下，超導(dǎo)磁阻電動(dòng)機(jī)比常規(guī)磁阻電動(dòng)機(jī)明顯地提高了電機(jī)X/X值，因而以更小的尺寸獲得了更大的輸出轉(zhuǎn)矩、更高的效率和功率因數(shù)，同時(shí)電機(jī)的穩(wěn)定運(yùn)行區(qū)間也有所增大.計(jì)算結(jié)果還表明，采用抗磁性更強(qiáng)的YBCO塊材作為交軸阻磁介質(zhì)，能夠保證轉(zhuǎn)子在獲得較大的直、交軸磁阻差異的同時(shí)不必犧牲較大的極孤系數(shù)和氣隙寬度，從而氣隙磁密有較好的波形，電機(jī)具有較好的同步性能.論文也對(duì)幾種具有相同定子但轉(zhuǎn)子結(jié)構(gòu)不同的HTS磁阻電動(dòng)機(jī)做了比較，比較結(jié)果顯示，ALA式HTS磁阻電動(dòng)機(jī)比內(nèi)反應(yīng)式HTS磁阻電動(dòng)機(jī)具有更大的輸出轉(zhuǎn)矩;當(dāng)輸出功率較大時(shí)，ALA結(jié)構(gòu)的HTS磁阻電動(dòng)機(jī)還比內(nèi)反應(yīng)結(jié)構(gòu)具有更好的穩(wěn)態(tài)工作特性.另外發(fā)現(xiàn)，thin-zebra ALA式HTS磁阻電動(dòng)機(jī)的同步性能比thick-zebra ALA式HTS磁阻電動(dòng)機(jī)更好.在進(jìn)行內(nèi)反應(yīng)式HTS磁阻電動(dòng)機(jī)的設(shè)計(jì)時(shí)，內(nèi)反應(yīng)槽既要盡量阻隔交軸磁通，又要分布的比較均勻，這樣才能既獲得足夠的直、交軸同步電抗比，又削弱轉(zhuǎn)矩脈動(dòng)，從而最終改善電機(jī)的同步性能.
Abstract: Electrolytic capacitors are notorious for short lifetimes in high-temperature applications such asLED light bulbs. The careful selection of these devices with proper interpretation of their specifications isessential to ensure that they do not compromise the life of the end product. This application notediscusses this problem with electrolytic capacitors in LED light bulbs and provides an analysis that showshow it is possible to use electrolytics in such products.
The goal of this book is to introduce the simulation methods necessary to describe
the behaviour of semiconductor devices during an electrostatic discharge (ESD).
The challenge of this task is the correct description of semiconductor devices under
very high current density and high temperature transients. As it stands, the book
can be no more than a snapshot and a summary of the research in this field
during the past few years. The authors hope that the book will provide the basis
for further development of simulation methods at this current frontier of device
physics.
The challenges associated with the design and implementation of Electro-
static Discharge (ESD) protection circuits become increasingly complex as
technology is scaled well into nano-metric regime. One must understand the
behavior of semiconductor devices under very high current densities, high
temperature transients in order to surmount the nano-meter ESD challenge.
As a consequence, the quest for suitable ESD solution in a given technology
must start from the device level. Traditional approaches of ESD design may
not be adequate as the ESD damages occur at successively lower voltages in
nano-metric dimensions.
This chapter surveys the high temperature and oxygen partial pressure
behavior of complex oxide heterostructures as determined by in situ synchrotron
X-ray methods. We consider both growth and post-growth behavior, emphasizing
the observation of structural and interfacial defects relevant to the size-dependent
properties seen in these systems.
Digital Thermostat with High Accuracy
-6,00 to 46,00 °C
Digital Thermostat
We build a digital thermostat for home applications, which controls the room temperature. I
used the AT90S2313 microprocessor of ATMEL. The digital thermostat opens the main heating valve of
the apartment and the hot water flows in the radiators.
Digital Thermostat Board
