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Most circuit designers are familiar with diode dynamiccharacteristics such as charge storage, voltage dependentcapacitance and reverse recovery time. Less commonlyacknowledged and manufacturer specifi ed is diode forwardturn-on time. This parameter describes the timerequired for a diode to turn on and clamp at its forwardvoltage drop. Historically, this extremely short time, unitsof nanoseconds, has been so small that user and vendoralike have essentially ignored it. It is rarely discussed andalmost never specifi ed. Recently, switching regulator clockrate and transition time have become faster, making diodeturn-on time a critical issue. Increased clock rates aremandated to achieve smaller magnetics size; decreasedtransition times somewhat aid overall effi ciency but areprincipally needed to minimize IC heat rise. At clock speedsbeyond about 1MHz, transition time losses are the primarysource of die heating.
上傳時間： 2013-10-10
上傳用戶：誰偷了我的麥兜
A complete design for a data acquisition card for the IBM PC is detailed in this application note. Additionally, C language code is provided to allow sampling of data at speed of more than 20kHz. The speed limitation is strictly based on the execution speed of the "C" data acquisition loop. A "Turbo" XT can acquire data at speeds greater than 20kHz. Machines with 80286 and 80386 processors can go faster than 20kHz. The computer that was used as a test bed in this application was an XT running at 4.77MHz and therefore all system timing and acquisition time measurements are based on a 4.77MHz clock speed.
上傳時間： 2013-10-29
上傳用戶：BOBOniu
使用時鐘PLL的源同步系統時序分析一）回顧源同步時序計算Setup Margin = Min Clock Etch Delay – Max Data Etch Delay – Max Delay Skew – Setup TimeHold Margin = Min Data Etch Delay – Max Clock Etch Delay + Min Delay Skew + Data Rate – Hold Time下面解釋以上公式中各參數的意義：Etch Delay：與常說的飛行時間(Flight Time)意義相同，其值并不是從仿真直接得到，而是通過仿真結果的后處理得來。請看下面圖示：圖一為實際電路，激勵源從輸出端，經過互連到達接收端，傳輸延時如圖示Rmin，Rmax，Fmin，Fmax。圖二為對應輸出端的測試負載電路，測試負載延時如圖示Rising，Falling。通過這兩組值就可以計算得到Etch Delay 的最大和最小值。
上傳時間： 2013-11-05
上傳用戶：VRMMO
The Circuit Designer’s Companion Second edition Tim Williams
標簽： Designers Companion Circuit PCB
上傳時間： 2013-11-04
上傳用戶：fredguo
數字與模擬電路設計技巧IC與LSI的功能大幅提升使得高壓電路與電力電路除外，幾乎所有的電路都是由半導體組件所構成，雖然半導體組件高速、高頻化時會有EMI的困擾，不過為了充分發揮半導體組件應有的性能，電路板設計與封裝技術仍具有決定性的影響。 模擬與數字技術的融合由于IC與LSI半導體本身的高速化，同時為了使機器達到正常動作的目的，因此技術上的跨越競爭越來越激烈。雖然構成系統的電路未必有clock設計，但是毫無疑問的是系統的可靠度是建立在電子組件的選用、封裝技術、電路設計與成本，以及如何防止噪訊的產生與噪訊外漏等綜合考慮。機器小型化、高速化、多功能化使得低頻/高頻、大功率信號/小功率信號、高輸出阻抗/低輸出阻抗、大電流/小電流、模擬/數字電路，經常出現在同一個高封裝密度電路板，設計者身處如此的環境必需面對前所未有的設計思維挑戰，例如高穩定性電路與吵雜(noisy)性電路為鄰時，如果未將噪訊入侵高穩定性電路的對策視為設計重點，事后反復的設計變更往往成為無解的夢魘。模擬電路與高速數字電路混合設計也是如此，假設微小模擬信號增幅后再將full scale 5V的模擬信號，利用10bit A/D轉換器轉換成數字信號，由于分割幅寬祇有4.9mV，因此要正確讀取該電壓level并非易事，結果造成10bit以上的A/D轉換器面臨無法順利運作的窘境。另一典型實例是使用示波器量測某數字電路基板兩點相隔10cm的ground電位，理論上ground電位應該是零，然而實際上卻可觀測到4.9mV數倍甚至數十倍的脈沖噪訊(pulse noise)，如果該電位差是由模擬與數字混合電路的grand所造成的話，要測得4.9 mV的信號根本是不可能的事情，也就是說為了使模擬與數字混合電路順利動作，必需在封裝與電路設計有相對的對策，尤其是數字電路switching時，ground vance noise不會入侵analogue ground的防護對策，同時還需充分檢討各電路產生的電流回路(route)與電流大小，依此結果排除各種可能的干擾因素。以上介紹的實例都是設計模擬與數字混合電路時經常遇到的瓶頸，如果是設計12bit以上A/D轉換器時，它的困難度會更加復雜。
上傳時間： 2013-11-16
上傳用戶：731140412
LAYOUT REPORT .............. 1 目錄.................. 1 1. PCB LAYOUT 術語解釋(TERMS)......... 2 2. Test Point : ATE 測試點供工廠ICT 測試治具使用............ 2 3. 基準點 (光學點) -for SMD:........... 4 4. 標記 (LABEL ING)......... 5 5. VIA HOLE PAD................. 5 6. PCB Layer 排列方式...... 5 7.零件佈置注意事項 (PLACEMENT NOTES)............... 5 8. PCB LAYOUT 設計............ 6 9. Transmission Line ( 傳輸線 )..... 8 10.General Guidelines – 跨Plane.. 8 11. General Guidelines – 繞線....... 9 12. General Guidelines – Damping Resistor. 10 13. General Guidelines - RJ45 to Transformer................. 10 14. Clock Routing Guideline........... 12 15. OSC & CRYSTAL Guideline........... 12 16. CPU
上傳時間： 2013-12-20
上傳用戶：康郎
Integrated EMI/Thermal Design forSwitching Power SuppliesWei ZhangThesis submitted to the Faculty of theVirginia Polytechnic Institute and State Universityin partial fulfillment of the requirements for the degree of Integrated EMI/Thermal Design forSwitching Power SuppliesWei Zhang(ABSTRACT)This work presents the modeling and analysis of EMI and thermal performancefor switch power supply by using the CAD tools. The methodology and design guidelinesare developed.By using a boost PFC circuit as an example, an equivalent circuit model is builtfor EMI noise prediction and analysis. The parasitic elements of circuit layout andcomponents are extracted analytically or by using CAD tools. Based on the model, circuitlayout and magnetic component design are modified to minimize circuit EMI. EMI filtercan be designed at an early stage without prototype implementation.In the second part, thermal analyses are conducted for the circuit by using thesoftware Flotherm, which includes the mechanism of conduction, convection andradiation. Thermal models are built for the components. Thermal performance of thecircuit and the temperature profile of components are predicted. Improved thermalmanagement and winding arrangement are investigated to reduce temperature.In the third part, several circuit layouts and inductor design examples are checkedfrom both the EMI and thermal point of view. Insightful information is obtained.
上傳時間： 2013-11-10
上傳用戶：1595690
This document provides practical, common guidelines for incorporating PCI Express interconnect layouts onto Printed Circuit Boards (PCB) ranging from 4-layer desktop baseboard designs to 10- layer or more server baseboard designs. Guidelines and constraints in this document are intended for use on both baseboard and add-in card PCB designs. This includes interconnects between PCI Express devices located on the same baseboard (chip-to-chip routing) and interconnects between a PCI Express device located “down” on the baseboard and a device located “up” on an add-in card attached through a connector. This document is intended to cover all major components of the physical interconnect including design guidelines for the PCB traces, vias and AC coupling capacitors, as well as add-in card edge-finger and connector considerations. The intent of the guidelines and examples is to help ensure that good high-speed signal design practices are used and that the timing/jitter and loss/attenuation budgets can also be met from end-to-end across the PCI Express interconnect. However, while general physical guidelines and suggestions are given, they may not necessarily guarantee adequate performance of the interconnect for all layouts and implementations. Therefore, designers should consider modeling and simulation of the interconnect in order to ensure compliance to all applicable specifications. The document is composed of two main sections. The first section provides an overview of general topology and interconnect guidelines. The second section concentrates on physical layout constraints where bulleted items at the beginning of a topic highlight important constraints, while the narrative that follows offers additional insight.
上傳時間： 2013-10-15
上傳用戶：busterman
In this paper, two types of MMIC voltage controlled oscillators have been successfully demonstrated. The first chip with single tuning diode shows the excellent tuning linearity. The second chip with two tuning diodes can improve the tuning bandwidth.
上傳時間： 2013-10-17
上傳用戶：xjz632
高的工作電壓高達100V N雙N溝道MOSFET同步驅動 The D810DCDC is a synchronous step-down switching regulator controller that can directly step-down voltages from up to 100V, making it ideal for telecom and automotive applications. The D810DCDC uses a constant on-time valley current control architecture to deliver very low duty cycles with accurate cycle-by-cycle current limit, without requiring a sense resistor. A precise internal reference provides 0.5% DC accuracy. A high bandwidth (25MHz) error amplifi er provides very fast line and load transient response. Large 1Ω gate drivers allow the D810DCDC to drive multiple MOSFETs for higher current applications. The operating frequency is selected by an external resistor and is compensated for variations in VIN and can also be synchronized to an external clock for switching-noise sensitive applications. Integrated bias control generates gate drive power from the input supply during start-up and when an output shortcircuit occurs, with the addition of a small external SOT23 MOSFET. When in regulation, power is derived from the output for higher effi ciency.
上傳時間： 2013-10-24
上傳用戶：wd450412225
