電磁導波檢測技術因其非接觸耦合的特性已被廣泛應用于各種金屬管道無損檢測領域中，但導波的激勵脈沖群重復頻率的確定長久以來卻沒有一個有效的解決方法。為此，本文提出了以有、無缺陷的重復脈沖群檢測信號的相關性作為判別標準，選取電磁導波激勵脈沖群最佳重復頻率，并從檢測信號特征提取和識別的角度驗證了本文選取的激勵脈沖群最佳重復頻率可有效提高導波檢測信號之間的區(qū)分度，減小檢測信號間的干擾，提高缺陷識別的準確性。
上傳時間： 2013-11-04
上傳用戶：ywcftc277
Abstract: What can be simpler than designing with CMOS and BiCMOS? These technologies are very easy to use butthey still require careful design. This tutorial discusses the odd case of circuits that seem to work but exhibit somepeculiar behaviors—including burning the designer's fingers!
上傳時間： 2013-11-03
上傳用戶：dick_sh
The MAX17600–MAX17605 devices are high-speedMOSFET drivers capable of sinking /sourcing 4A peakcurrents. The devices have various inverting and noninvertingpart options that provide greater flexibility incontrolling the MOSFET. The devices have internal logiccircuitry that prevents shoot-through during output-statchanges. The logic inputs are protected against voltagespikes up to +14V, regardless of VDD voltage. Propagationdelay time is minimized and matched between the dualchannels. The devices have very fast switching time,combined with short propagation delays (12ns typ),making them ideal for high-frequency circuits. Thedevices operate from a +4V to +14V single powersupply and typically consume 1mA of supply current.The MAX17600/MAX17601 have standard TTLinput logic levels, while the MAX17603 /MAX17604/MAX17605 have CMOS-like high-noise margin (HNM)input logic levels. The MAX17600/MAX17603 are dualinverting input drivers, the MAX17601/MAX17604 aredual noninverting input drivers, and the MAX17602 /MAX17605 devices have one noninverting and oneinverting input. These devices are provided with enablepins (ENA, ENB) for better control of driver operation.
標簽： 17600 MAX 數(shù)據(jù)資料
上傳時間： 2013-12-20
上傳用戶：zhangxin
The MAX4968/MAX4968A are 16-channel, high-linearity,high-voltage, bidirectional SPST analog switches with18I (typ) on-resistance. The devices are ideal for use inapplications requiring high-voltage switching controlledby a low-voltage control signal, such as ultrasound imagingand printers. The MAX4968A provides integrated40kI (typ) bleed resistors on each switch terminal todischarge capacitive loads. Using HVCMOS technology,these switches combine high-voltage bilateral MOSswitches and low-power CMOS logic to provide efficientcontrol of high-voltage analog signals.
標簽： 4968 MAX 數(shù)據(jù)手冊
上傳時間： 2013-10-09
上傳用戶：yepeng139
為了克服傳統(tǒng)功率MOS 導通電阻與擊穿電壓之間的矛盾,提出了一種新的理想器件結構,稱為超級結器件或Cool2MOS ,CoolMOS 由一系列的P 型和N 型半導體薄層交替排列組成。在截止態(tài)時,由于p 型和n 型層中的耗盡區(qū)電場產生相互補償效應,使p 型和n 型層的摻雜濃度可以做的很高而不會引起器件擊穿電壓的下降。導通時,這種高濃度的摻雜使器件的導通電阻明顯降低。由于CoolMOS 的這種獨特器件結構,使它的電性能優(yōu)于傳統(tǒng)功率MOS。本文對CoolMOS 導通電阻與擊穿電壓關系的理論計算表明,對CoolMOS 橫向器件: Ron ·A = C ·V 2B ,對縱向器件: Ron ·A = C ·V B ,與縱向DMOS 導通電阻與擊穿電壓之間Ron ·A = C ·V 2. 5B 的關系相比,CoolMOS 的導通電阻降低了約兩個數(shù)量級。
上傳時間： 2013-10-21
上傳用戶：1427796291
看到不少網友對COOLMOS感興趣，把自己收集整理的資料、個人理解發(fā)出來，與大家共享。個人理解不一定完全正確，僅供參考。COOLMOS（super junction）原理，與普通VDMOS的差異如下： 對于常規(guī)VDMOS器件結構，大家都知道Rdson與BV這一對矛盾關系，要想提高BV，都是從減小EPI參雜濃度著手，但是外延層又是正向電流流通的通道，EPI參雜濃度減小了，電阻必然變大，Rdson就大了。所以對于普通VDMOS，兩者矛盾不可調和。8 X( ?1 B4 i* q: i但是對于COOLMOS，這個矛盾就不那么明顯了。通過設置一個深入EPI的的P區(qū)，大大提高了BV，同時對Rdson上不產生影響。為什么有了這個深入襯底的P區(qū)，就能大大提高耐壓呢？
標簽： COOLMOS
上傳時間： 2014-12-23
上傳用戶：標點符號
由lnfineon Technologies (IT)公司推出的COOLMOS ICE2A165／2,65／365系列芯片是PWM+MOSFET二合一芯片，其優(yōu)點是：用它做開關電源，無需加散熱器，在通用電網即可輸出20～50W 的功率；保護功能齊全；電路結構簡單；能自動降低空載時的工作頻率，從而降低待機狀態(tài)的損耗，故在中小功率開關電源中有著廣泛的應用前景。
上傳時間： 2013-11-09
上傳用戶：chenjjer
Abstract: Alexander Graham Bell patented twisted pair wires in 1881. We still use them today because they work so well. In addition we have the advantage ofincredible computer power within our world. Circuit simulators and filter design programs are available for little or no cost. We combine the twisted pair and lowpassfilters to produce spectacular rejection of radio frequency interference (RFI) and electromagnetic interference (EMI). We also illustrate use of a precision resistorarray to produce a customizable differential amplifier. The precision resistors set the gain and common mode rejection ratios, while we choose the frequencyresponse.
上傳時間： 2014-11-26
上傳用戶：Vici
本應用筆記介紹如何運用本文所述電路來避免添加額外的求和放大器，以及IOUT架構如何支持交流和直流兩種輸入，從而使該電路非常適合數(shù)據(jù)采集和儀器儀表應用。
上傳時間： 2013-11-21
上傳用戶：czl10052678
Recently a new technology for high voltage Power MOSFETshas been introduced – the CoolMOS™ . Based on thenew device concept of charge compensation the RDS(on) areaproduct for e.g. 600V transistors has been reduced by afactor of 5. The devices show no bipolar current contributionlike the well known tail current observed during the turn-offphase of IGBTs. CoolMOS™ virtually combines the lowswitching losses of a MOSFET with the on-state losses of anIGBT.
標簽： COOLMOS
上傳時間： 2013-11-14
上傳用戶：zhyiroy
