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In this first part of the book the Vienna Link Level (LL) Simulators are described.
The first chapter provides basics of LL simulations, introduces the most common
variables and parameters as well as the transceiver STRUCTURES that are applied in
Long-Term Evolution (LTE) and Long-Term Evolution-Advanced (LTEA). We
focus here mostly on the Downlink (DL) of LTE as most results reported in later
chapters are related to DL transmissions.
標(biāo)簽：
LTE-Advanced
Simulators
Vienna
上傳時(shí)間：
2020-06-01
上傳用戶：shancjb
-
Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability
of electronic components. It is an event in which a finite amount of charge is trans-
ferred from one object (i.e., human body) to another (i.e., microchip). This process
can result in a very high current passing through the microchip within a very short
period of time, and, hence, more than 35% of chip damages can be attributed to an
ESD-related event. As such, designing on-chip ESD STRUCTURES to protect integrated
circuits against the ESD stresses is a high priority in the semiconductor industry.
標(biāo)簽：
Electrostatic
Protection
Discharge
上傳時(shí)間：
2020-06-05
上傳用戶：shancjb
-
Electrostatic discharge (ESD) phenomena have been known to mankind since the Greek
Empire when Thales of Miletus, one of the Seven Sages of Greece, noticed the attraction of
strands of hay to amber, leading to the coining of the word “electron.” Electrical discharge
and the guiding of electrical discharge (e.g., lightning) was of interest to Benjamin Franklin
in the 1700s, with the invention of the lightning rod. The lightning rod was mankind’s first
effort to guide the electrical discharge current of a lightning strike in a direction that would
not harm STRUCTURES.
標(biāo)簽：
Circuits
Devices
2015
ESD
and
上傳時(shí)間：
2020-06-05
上傳用戶：shancjb
-
ESD is a crucial factor for integrated circuits and influences their quality and reliability.
Today increasingly sensitive processes with deep sub micron STRUCTURES are developed. The
integration of more and more functionality on a single chip and saving of chip area is
required. Integrated circuits become more susceptible to ESD/EOS related damages.
However, the requirements on ESD robustness especially for automotive applications are
increasing. ESD failures are very often the reason for redesigns. Much research has been
conducted by semiconductor manufacturers on ESD robust design.
標(biāo)簽：
Guidelines
Design
Basic
ESD
上傳時(shí)間：
2020-06-05
上傳用戶：shancjb
-
As we enter the next millennium, there are clear technological patterns. First, the
electronic industry continues to scale microelectronic STRUCTURES to achieve faster
devices, new devices, or more per unit area. Secondly, electrostatic charge, electrostatic
discharge (ESD), electrical overstress (EOS) and electromagnetic emissions (EMI)
continue to be a threat to these scaled STRUCTURES. This dichotomy presents a dilemma
for the scaling of semiconductor technologies and a future threat to new technologies.
Technological advancements, material changes, design techniques, and simulation can
fend off this growing concern – but to maintain this ever-threatening challenge, one must
continue to establish research and education in this issue.
標(biāo)簽：
ESD-Phenomena-and-the-Reliability
上傳時(shí)間：
2020-06-05
上傳用戶：shancjb
-
Microengineering and Microelectromechanical systems (MEMS) have very few
watertight definitions regarding their subjects and technologies. Microengineering
can be described as the techniques, technologies, and practices involved in the
realization of STRUCTURES and devices with dimensions on the order of micrometers.
MEMS often refer to mechanical devices with dimensions on the order of
micrometers fabricated using techniques originating in the integrated circuit (IC)
industry, with emphasis on silicon-based STRUCTURES and integrated microelectronic
circuitry. However, the term is now used to refer to a much wider range of
microengineered devices and technologies.
標(biāo)簽：
Microengineering
Interfacing
MEMS
and
上傳時(shí)間：
2020-06-06
上傳用戶：shancjb
-
Since the original publication of Manual 74 in 1991, and the preceding
“Guidelines for Transmission Line Structural Loading” in 1984, the
understanding of structural loadings on transmission line STRUCTURES has
broadened signifi cantly. However, improvements in computational capa-
bility have enabled the transmission line engineer to more easily deter-
mine structural loadings without properly understanding the parameters
that affect these loads. Many seasoned professionals have expressed
concern for the apparent lack of recent information on the topic of struc-
tural loadings as new engineers enter this industry. The Committee on
Electrical Transmission STRUCTURES is charged with the responsibility to
report, evaluate, and provide loading requirements of transmission struc-
tures. This task committee was therefore formed to update and revise the
1991 manual.
標(biāo)簽：
Transmission
Guidelines
Electrical
Line
for
上傳時(shí)間：
2020-06-07
上傳用戶：shancjb
-
This paper presents a new type of electromagnetic damper with rotating inertial mass that has been devel
oped to control the vibrations of STRUCTURES subjected to earthquakes. The electromagnetic inertial mass
damper (EIMD) consists of a ball screw that converts axial oscillation of the rod end into rotational motion
of the internal flflywheel and an electric generator that is turned by the rotation of the inner rod. The EIMD is
able to generate a large inertial force created by the rotating flflywheel and a variable damping force devel
oped by the electric generator. Device performance tests of reduced-scale and full-scale EIMDs were under
taken to verify the basic characteristics of the damper and the validity of the derived theoretical formulae.
Shaking table tests of a three-story structure with EIMDs and earthquake response analyses of a building
with EIMDs were conducted to demonstrate the seismic response control performance of the EIMD. The
EIMD is able to reduce story drifts as well as accelerations and surpasses conventional types of dampers
in reducing acceleration responses.
標(biāo)簽：
electromagnetic
response
Seismic
control
using
上傳時(shí)間：
2021-11-04
上傳用戶：a1293065
-
German universities and scientists have repeatedly set the intermational standard in drive technology. Identification and active compensation of natural frequencies in oscillatory mechanics, status controls with monitoring STRUCTURES incorporating acceleration sensors, adaptive compensation of measurement system deficiencies, self-adjusting detent torque compensation… everything invented with only a single aim in mind: to continue improv-ing the motion control, dynamics, precision and processing speed of your machines. For the industrial applicabability of this technology scientific publications in proceedings and laboratory test rigs are not enough. These features consequenty need to be converted into cost-efficient and easily manageable products. That 's exactly what we have done.So in future, if you should need more than today ' smarket can offer you, now everything isgoing to be alright. With our new high-performance ServoOne drive series you will experi-ence
標(biāo)簽：
servoone
上傳時(shí)間：
2022-06-24
上傳用戶：kingwide
-
譚浩強(qiáng)《C程序設(shè)計(jì)》隨書光盤教學(xué)視頻共51講2.38G
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C專家編程
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c語言圖形編程技術(shù)
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C語言深度解剖
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C語言核心技術(shù)（中文版）
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C語言12天基礎(chǔ)課
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c和指針
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C標(biāo)準(zhǔn)庫-中文
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中國(guó)石油大學(xué)（華東）C語言編程練習(xí)題及答案全集.zip
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再再論指針.pdf
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一份不錯(cuò)的C語言指針教程.pdf
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數(shù)據(jù)結(jié)構(gòu)C語言版.pdf
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[大家網(wǎng)]C語言實(shí)例解析精粹_曹衍龍[www.TopSage.com].pdf
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[C陷阱與缺陷].(美)Andrew.Koenig.pdf
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C Primer plus 第五版（非掃描帶書簽 .zip
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Advanced C.pdf
標(biāo)簽：
直插
電阻
樣本
上傳時(shí)間：
2013-04-15
上傳用戶：eeworm
