An optical fiber amplifier is a key component for enabling efficient transmission of
wavelength-divisionmultiplexed(WDM)signalsoverlongdistances.Eventhough
many alternative technologies were available, erbium-doped fiber amplifiers won
theraceduringtheearly1990sandbecameastandardcomponentforlong-haulopti-
caltelecommunicationssystems.However,owingtotherecentsuccessinproducing
low-cost, high-power, semiconductor lasers operating near 1450 nm, the Raman
amplifiertechnologyhasalsogainedprominenceinthedeploymentofmodernlight-
wavesystems.Moreover,becauseofthepushforintegratedoptoelectroniccircuits,
semiconductor optical amplifiers, rare-earth-doped planar waveguide amplifiers,
and silicon optical amplifiers are also gaining much interest these days.
Ultra-wideband (UWB) technology enables high data-rate short-range communica-
tion, in excess of hundredmegabit-per-secondsand up to multi-gigabit-per-seconds,
over a wide spectrum of frequencies, while keeping power consumption at low lev-
els. This low power operation results in a less-interfering co-existence with other
existed communication technologies (e.g., UNII bands).
In addition to carrying a huge amount of data over a distance of up to 230 feet
at very low power (less than 0.5mW), the UWB signal has the ability to penetrate
through the doors and other obstacles that tend to reflect signals at more limited
bandwidths and higher power densities.
In the seven years since the first edition of this book was completed, Electrostatic
Discharge (ESD) phenomena in integrated circuits (IC) continues to be important
as technologies shrink and the speed and size of the chips increases. The phenom-
ena related to ESD events in semiconductor devices take place outside the realm of
normal device operation. Hence, the physics governing this behavior are not typ-
ically found in general textbooks on semiconductors.
Microengineering and Microelectromechanical systems (MEMS) have very few
watertight definitions regarding their subjects and technologies. Microengineering
can be described as the techniques, technologies, and practices involved in the
realization of structures and devices with dimensions on the order of micrometers.
MEMS often refer to mechanical devices with dimensions on the order of
micrometers fabricated using techniques originating in the integrated circuit (IC)
industry, with emphasis on silicon-based structures and integrated microelectronic
circuitry. However, the term is now used to refer to a much wider range of
microengineered devices and technologies.
GaN is an already well implanted semiconductor
technology, widely diffused in the LED optoelectronics
industry. For about 10 years, GaN devices have also been
developed for RF wireless applications where they can
replace silicon transistors in some selected systems. That
incursion in the RF field has open the door to the power
switching capability in the lower frequency range and
thus to the power electronic applications.
Compared to silicon, GaN exhibits largely better figures
for most of the key specifications: Electric field, energy
gap, electron mobility and melting point. Intrinsically,
GaN could offer better performance than silicon in
terms of: breakdown voltage, switching frequency and
Overall systems efficiency.
There have been many developments in the field of power electronics since
the publication of the second edition, almost five years ago. Devices have
become bigger and better - bigger silicon die, and current and voltage
ratings. However, semiconductor devices have also become smaller and
better, integrated circuit devices, that is. And the marriage of low power
integrated circuit tecnology and high power semiconductors has resulted in
benefit to both fields.
The PW2202 is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planarTechnology which reduce the conduction loss, improve switching performance and enhance theavalanche energy. The transistor can be used in various power switching circuit for system
