An optical fiber amplifier is a key component for enabling efficient transmission of wavelength-divisionmultiplexed(WDM)signalsoverlongdistances.Eventhough many alternative technologies were available, erbium-doped fiber amplifiers won theraceduringtheearly1990sandbecameastandardcomponentforlong-haulopti- caltelecommunicationssystems.However,owingtotherecentsuccessinproducing low-cost, high-power, semiconductor lasers operating near 1450 nm, the Raman amplifiertechnologyhasalsogainedprominenceinthedeploymentofmodernlight- wavesystems.Moreover,becauseofthepushforintegratedoptoelectroniccircuits, semiconductor optical amplifiers, rare-earth-doped planar waveguide amplifiers, and silicon optical amplifiers are also gaining much interest these days.
標(biāo)簽： Propagation Light Media Gain in
上傳時(shí)間： 2020-05-27
上傳用戶：shancjb
Ultra-wideband (UWB) technology enables high data-rate short-range communica- tion, in excess of hundredmegabit-per-secondsand up to multi-gigabit-per-seconds, over a wide spectrum of frequencies, while keeping power consumption at low lev- els. This low power operation results in a less-interfering co-existence with other existed communication technologies (e.g., UNII bands). In addition to carrying a huge amount of data over a distance of up to 230 feet at very low power (less than 0.5mW), the UWB signal has the ability to penetrate through the doors and other obstacles that tend to reflect signals at more limited bandwidths and higher power densities.
標(biāo)簽： silicon-Based Front-Ends RF
上傳時(shí)間： 2020-06-01
上傳用戶：shancjb
In the seven years since the first edition of this book was completed, Electrostatic Discharge (ESD) phenomena in integrated circuits (IC) continues to be important as technologies shrink and the speed and size of the chips increases. The phenom- ena related to ESD events in semiconductor devices take place outside the realm of normal device operation. Hence, the physics governing this behavior are not typ- ically found in general textbooks on semiconductors.
標(biāo)簽： Integrated Circuits silicon ESD In
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
Microengineering and Microelectromechanical systems (MEMS) have very few watertight definitions regarding their subjects and technologies. Microengineering can be described as the techniques, technologies, and practices involved in the realization of structures and devices with dimensions on the order of micrometers. MEMS often refer to mechanical devices with dimensions on the order of micrometers fabricated using techniques originating in the integrated circuit (IC) industry, with emphasis on silicon-based structures and integrated microelectronic circuitry. However, the term is now used to refer to a much wider range of microengineered devices and technologies.
標(biāo)簽： Microengineering Interfacing MEMS and
上傳時(shí)間： 2020-06-06
上傳用戶：shancjb
GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.
標(biāo)簽： GaN-on-Si Displace and SiC Si
上傳時(shí)間： 2020-06-07
上傳用戶：shancjb
There have been many developments in the field of power electronics since the publication of the second edition, almost five years ago. Devices have become bigger and better - bigger silicon die, and current and voltage ratings. However, semiconductor devices have also become smaller and better, integrated circuit devices, that is. And the marriage of low power integrated circuit tecnology and high power semiconductors has resulted in benefit to both fields.
標(biāo)簽： Electronics Handbook Edition Power
上傳時(shí)間： 2020-06-07
上傳用戶：shancjb
硅光設(shè)計(jì)書籍，包括微環(huán)諧振器，MZI，布拉格光柵，包括原理，仿真和優(yōu)化過(guò)程的詳細(xì)說(shuō)明。
標(biāo)簽： 硅光設(shè)計(jì)
上傳時(shí)間： 2022-01-01
上傳用戶：
The PW2202 is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planarTechnology which reduce the conduction loss, improve switching performance and enhance theavalanche energy. The transistor can be used in various power switching circuit for system
標(biāo)簽： pw2202
上傳時(shí)間： 2022-02-11
上傳用戶：默默
靜電放電（Electrostatic Discharge，ESD）是構(gòu)成集成電路可靠性的主要因素之一，存在于生產(chǎn)到使用的每一個(gè)環(huán)節(jié)，并成為開發(fā)新一代工藝技術(shù)的難點(diǎn)之一，近年來(lái)，對(duì)ESD的研究也因而越來(lái)越受到重視，仿真工具在ESD領(lǐng)域的應(yīng)用使得ESD防護(hù)的研究變得更為便利，可大幅縮短研發(fā)周期然而，由于ESD現(xiàn)象復(fù)雜的物理機(jī)制，極端的電場(chǎng)及溫度條件，以及ESD仿真中頻繁的不收斂現(xiàn)象，都使得FSD的仿真變得極為困難本文詳細(xì)闡述了ESD的來(lái)源、造成的危害以及如何測(cè)試集成電路的防靜電沖擊能力，并基于 Sentaurus軟件，對(duì)ESD防護(hù)器件展開了的分析、研究，內(nèi)容包括1）掌握ESD保護(hù)的基本理論、測(cè)試方法和防護(hù)機(jī)理2）研究了工藝仿真流程的步驟以及網(wǎng)格定義在工藝仿真中的重要性，并對(duì)網(wǎng)格定義的方法進(jìn)行了探討3）硏究了器件仿真流程以及器件仿真中的物理模型和模型函數(shù)，并對(duì)描述同一物理機(jī)制的的各種不同模型展開對(duì)比分析.主要包括傳輸方程模型、能帶模型、各種遷移率退化模型、雪崩離化模型和復(fù)合模型4）研究了雙極型晶體管和可控硅（silicon Controlled rectifier，SCR）防護(hù)器件的仿真，并通過(guò)對(duì)仿真結(jié)果的分析，研究了ESD保護(hù)器件在ESD應(yīng)力作用下的工作機(jī)理關(guān)鍵詞：靜電放電；網(wǎng)格；器件仿真；雙極型晶體管；可控硅
上傳時(shí)間： 2022-03-30
上傳用戶：
Altera(Intel)_MAX10_10M02SCU169開發(fā)板資料硬件參考設(shè)計(jì)+邏輯例程.QM_MAX10_10M02SCU169開發(fā)板主要特征參數(shù)如下所示：? 主控CPLD：10M02SCU169C8G；? 主控CPLD外部時(shí)鐘源頻率：50MHz；? 10M02SCU169C8G芯片內(nèi)部自帶豐富的Block RAM資源；? 10M02SCU169C8G芯片邏輯單元數(shù)為2K LE；? QM_MAX10_10M02SCU169開發(fā)板板載silicon Labs的CP2102芯片來(lái)實(shí)現(xiàn)USB轉(zhuǎn)串口功能；? QM_MAX10_10M02SCU169開發(fā)板板載MP2359高效率DC/DC提供CPLD芯片工作的3.3V電源；? QM_MAX10_10M02SCU169開發(fā)板引出了兩排50p、2.54mm間距的排座，可以用于外接24Bit的TFT液晶屏、CY7C68013 USB模塊、高速ADC采集模塊或者CMOS攝像頭模塊等；? QM_MAX10_10M02SCU169開發(fā)板引出了芯片的3路按鍵用于測(cè)試；? QM_MAX10_10M02SCU169開發(fā)板引出了芯片的3路LED用于測(cè)試；? QM_MAX10_10M02SCU169開發(fā)板引出了芯片的JTAG調(diào)試端口，采用雙排10p、2.54mm的排針；
上傳時(shí)間： 2022-05-11
上傳用戶：
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