As we enter the next millennium, there are clear technological patterns. First, the electronic industry continues to scale microelectronic structures to achieve faster devices, new devices, or more per unit area. Secondly, electrostatic charge, electrostatic Discharge (ESD), electrical overstress (EOS) and electromagnetic emissions (EMI) continue to be a threat to these scaled structures. This dichotomy presents a dilemma for the scaling of semiconductor technologies and a future threat to new technologies. Technological advancements, material changes, design techniques, and simulation can fend off this growing concern – but to maintain this ever-threatening challenge, one must continue to establish research and education in this issue.
標簽： ESD-Phenomena-and-the-Reliability
上傳時間： 2020-06-05
上傳用戶：shancjb
)Armature windings of the electric motor for NO.2 deck cargo winch found low insulation. Windings re-winded,painted and baked dry. (2) NO.1 main air compressor failed to build up pressure.The machine disassembled, cleaned and inspected. The Discharge valve plate found broken. The valve palte renewed and running trials tested after being reassembled.
標簽： 答案
上傳時間： 2020-07-14
上傳用戶：
以AT89S52單片機為控制核心,采用電容降壓技術,Buck電路拓撲,PWM驅動模塊和功率器件散熱設計,通過高速的數據采集、主功率輸入輸出模塊和控制模塊,設計一種新型智能車載充電器.在充電過程中,通過負脈沖瞬間放電實現對鉛酸蓄電池的再生修復,提高電池的有效容量,延長使用壽命.該充電器體積小、速度快、效率高、可靠性好.With AT89S52 single chip computer as the control core,a new type of intelligent car-carried charger was designed by using capacitance step-down technology,Buck circuit topology,PWM driving module and power device heat dissipation design,through high-speed data acquisition,main power input and output module and control module.In the charging process,the regeneration and repair of lead-acid batteries are realized by instantaneous Discharge of negative pulse,which improves the effective capacity of batteries and prolongs their service life.The charger has the advantages of small size,fast speed,high efficiency and good reliability.
標簽： 車載充電器
上傳時間： 2022-03-27
上傳用戶：
靜電放電（Electrostatic Discharge，ESD）是構成集成電路可靠性的主要因素之一，存在于生產到使用的每一個環節，并成為開發新一代工藝技術的難點之一，近年來，對ESD的研究也因而越來越受到重視，仿真工具在ESD領域的應用使得ESD防護的研究變得更為便利，可大幅縮短研發周期然而，由于ESD現象復雜的物理機制，極端的電場及溫度條件，以及ESD仿真中頻繁的不收斂現象，都使得FSD的仿真變得極為困難本文詳細闡述了ESD的來源、造成的危害以及如何測試集成電路的防靜電沖擊能力，并基于 Sentaurus軟件，對ESD防護器件展開了的分析、研究，內容包括1）掌握ESD保護的基本理論、測試方法和防護機理2）研究了工藝仿真流程的步驟以及網格定義在工藝仿真中的重要性，并對網格定義的方法進行了探討3）硏究了器件仿真流程以及器件仿真中的物理模型和模型函數，并對描述同一物理機制的的各種不同模型展開對比分析.主要包括傳輸方程模型、能帶模型、各種遷移率退化模型、雪崩離化模型和復合模型4）研究了雙極型晶體管和可控硅（Silicon Controlled rectifier，SCR）防護器件的仿真，并通過對仿真結果的分析，研究了ESD保護器件在ESD應力作用下的工作機理關鍵詞：靜電放電；網格；器件仿真；雙極型晶體管；可控硅
上傳時間： 2022-03-30
上傳用戶：
INTERNATIONAL STANDARD NORME INTERNATIONALEPart 4-2: Testing and measurement techniques – Electrostatic Discharge immunity test.About the IEC The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes International Standards for all electrical, electronic and related technologies.About IEC publications The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the latest edition, a corrigenda or an amendment might have been published.
標簽： IEC
上傳時間： 2022-04-19
上傳用戶：fliang
應用無跡卡爾曼濾波算法（UKF）進行鋰電池的SOC估計,采用Thevenin二階RC等效電路模型,對HPPC電池脈沖充放電實驗數據進行Matlab處理,得到較為準確的模型.通過在Matlab中編寫算法程序,對不同工況的估計值與實際值進行誤差估算及對比分析,通過此算法進行SOC估計,得到該算法可有效降低系統誤差并糾正SOC的初值偏差.The non trace Calman filter （UKF） is applied to the SOC estimation of lithium battery. The Thevenin two order RC equivalent circuit model is used to process the HPPC battery pulse charge Discharge experimental data by Matlab processing, and a more accurate model is obtained. By writing algorithm program in Matlab, the error estimation and comparison analysis of the estimated value and actual value of different states are carried out, and the SOC estimation is carried out by this algorithm. The algorithm can effectively reduce the system error and correct the initial value deviation of the SOC.
標簽： 卡爾曼濾波
上傳時間： 2022-05-03
上傳用戶：默默
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (Discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
標簽： igbt
上傳時間： 2022-06-20
上傳用戶：wangshoupeng199
