Communication today is not as easy as it was in the past. Protecting numerous com- munication services, which are operating in the same or adjacent communication channels, has become increasingly challenging. Communication systems have to be protected from both natural and manmade interference. Electromagnetic interfer- ence can be radiated or conducted, intentional or unintentional.
標簽： Communication ProtectIOn Systems EMI for
上傳時間： 2020-05-27
上傳用戶：shancjb
This book is intended to help electric power and telephone company personnel and individuals interested in properly protecting critical tele- communications circuits and equipment located in high voltage (HV) environments and to improve service reliability while maintaining safe working conditions. Critical telecommunications circuits are often located in HV environments such as electric utility power plants, substations, cell sites on power towers, and standalone telecommuni- cations facilities such as 911 call centers and mountaintop telecom- munications sites.
標簽： ProtectIOn Voltage High
上傳時間： 2020-05-27
上傳用戶：shancjb
This effort started as an answer to the numerous questions the authors have repeatedly had to answer about electrostatic discharge (ESD) ProtectIOn and input/output (1/0) designs. In the past no comprehensive book existed suffi- ciently covering these areas, and these topics were rarely taught in engineering schools. Thus first-time I/O and ESD ProtectIOn designers have had consider- able trouble getting started. This book is in part an answer to such needs.
上傳時間： 2020-06-05
上傳用戶：shancjb
Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability of electronic components. It is an event in which a finite amount of charge is trans- ferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time, and, hence, more than 35% of chip damages can be attributed to an ESD-related event. As such, designing on-chip ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry.
標簽： Electrostatic ProtectIOn Discharge
上傳時間： 2020-06-05
上傳用戶：shancjb
Failure analysis is invaluable in the learning process of electrostatic discharge (ESD) and electrical overstress (EOS) ProtectIOn design and development [1–8]. In the failure analysis of EOS, ESD, and latchup events, there are a number of unique failure analysis processes andinformationthatcanprovidesignificantunderstandingandillumination[4].Today,thereis still no design methodology or computer-aided design (CAD) tool which will predict EOS, ESDProtectIOnlevels,andlatchupinasemiconductorchip;thisisoneofthesignificantreasons why failure analysis is critical to the ESD design discipline.
標簽： Mechanisms Failure Models ESD and
上傳時間： 2020-06-05
上傳用戶：shancjb
Dear Reader, this book project brings to you a unique study tool for ESD ProtectIOn solutions used in analog-integrated circuit (IC) design. Quick-start learning is combined with in-depth understanding for the whole spectrum of cross- disciplinary knowledge required to excel in the ESD field. The chapters cover technical material from elementary semiconductor structure and device levels up to complex analog circuit design examples and case studies.
標簽： Circuits Design Analog ESD for
上傳時間： 2020-06-05
上傳用戶：shancjb
The goal of this book is to introduce the simulation methods necessary to describe the behaviour of semiconductor devices during an electrostatic discharge (ESD). The challenge of this task is the correct description of semiconductor devices under very high current density and high temperature transients. As it stands, the book can be no more than a snapshot and a summary of the research in this field during the past few years. The authors hope that the book will provide the basis for further development of simulation methods at this current frontier of device physics.
標簽： Development ProtectIOn ESD
上傳時間： 2020-06-05
上傳用戶：shancjb
在互補式金氧半(CMOS)積體電路中，隨著量產(chǎn)製程的演進，元件的尺寸已縮減到深次微 米(deep-submicron)階段，以增進積體電路(IC)的性能及運算速度，以及降低每顆晶片的製造 成本。但隨著元件尺寸的縮減，卻出現(xiàn)一些可靠度的問題。 在次微米技術(shù)中，為了克服所謂熱載子(Hot-Carrier)問題而發(fā)展出 LDD(Lightly-Doped Drain) 製程與結(jié)構(gòu); 為了降低 CMOS 元件汲極(drain)與源極(source)的寄生電阻(sheet resistance) Rs 與 Rd，而發(fā)展出 Silicide 製程; 為了降低 CMOS 元件閘級的寄生電阻 Rg，而發(fā)展出 Polycide 製 程 ; 在更進步的製程中把 Silicide 與 Polycide 一起製造，而發(fā)展出所謂 Salicide 製程
標簽： ProtectIOn CMOS ESD ICs in
上傳時間： 2020-06-05
上傳用戶：shancjb
This paper reviews key factors to practical ESD ProtectIOn design for RF and analog/mixed-signal (AMS) ICs, including general challenges emerging, ESD-RFIC interactions, RF ESD design optimization and prediction, RF ESD design characterization, ESD-RFIC co-design technique, etc. Practical design examples are discussed. It means to provide a systematic and practical design flow for whole-chip ESD ProtectIOn design optimization and prediction for RF/AMS ICs to ensure 1 st Si design success.
標簽： ESD_ProtectIOn_for_RF_and_AMS_ICs
上傳時間： 2020-06-05
上傳用戶：shancjb
Guideline Suggestion for High-Speed I/O ESD ProtectIOn
標簽： ESD_Suggestion_for_HighSpeed_IO_K er
上傳時間： 2020-06-05
上傳用戶：shancjb
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