在互補(bǔ)式金氧半(CMOS)積體電路中，隨著量產(chǎn)製程的演進(jìn)，元件的尺寸已縮減到深次微
米(deep-submicron)階段，以增進(jìn)積體電路(IC)的性能及運(yùn)算速度，以及降低每顆晶片的製造
成本。但隨著元件尺寸的縮減，卻出現(xiàn)一些可靠度的問(wèn)題。
在次微米技術(shù)中，為了克服所謂熱載子(Hot-Carrier)問(wèn)題而發(fā)展出 LDD(Lightly-Doped Drain)
製程與結(jié)構(gòu); 為了降低 CMOS 元件汲極(drain)與源極(source)的寄生電阻(sheet resistance) Rs 與
Rd，而發(fā)展出 Silicide 製程; 為了降低 CMOS 元件閘級(jí)的寄生電阻 Rg，而發(fā)展出 Polycide 製
程 ; 在更進(jìn)步的製程中把 Silicide 與 Polycide 一起製造，而發(fā)展出所謂 Salicide 製程
資源簡(jiǎn)介：在互補(bǔ)式金氧半(CMOS)積體電路中，隨著量產(chǎn)製程的演進(jìn)，元件的尺寸已縮減到深次微 米(deep-submicron)階段，以增進(jìn)積體電路(IC)的性能及運(yùn)算速度，以及降低每顆晶片的製造 成本。但隨著元件尺寸的縮減，卻出現(xiàn)一些可靠度的問(wèn)題。 在次微米技術(shù)中，為了克服所...
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
資源簡(jiǎn)介：The challenges associated with the design and implementation of Electro- static Discharge (ESD) Protection circuits become increasingly complex as technology is scaled well into nano-metric regime. One must understand the behavior of semico...
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
資源簡(jiǎn)介：資料->【E】光盤(pán)論文->【E5】英文書(shū)籍->On-Chip ESD Protection for integrated Circuits (英).pdf
上傳時(shí)間： 2013-04-24
上傳用戶：xwd2010
資源簡(jiǎn)介：Part2 of CPRM data document, CPRM is for copyright Protection in SD system
上傳時(shí)間： 2015-07-26
上傳用戶：zmy123
資源簡(jiǎn)介：Part3 of CPRM data document, CPRM is for copyright Protection in SD system
上傳時(shí)間： 2015-07-26
上傳用戶：aappkkee
資源簡(jiǎn)介：Part4 of CPRM data document, CPRM is for copyright Protection in SD system
上傳時(shí)間： 2015-07-26
上傳用戶：671145514
資源簡(jiǎn)介：Automatic Protection in Multicast networks
上傳時(shí)間： 2013-12-22
上傳用戶：腳趾頭
資源簡(jiǎn)介：Construction Strategy of ESD Protection CircuitAbstract： The principles used to construct ESD Protection on circuits and the basic conceptions of ESD Protection design are presented.Key words：ESD Protection/On circuit, ESD design window, ...
上傳時(shí)間： 2013-11-09
上傳用戶：Aidane
資源簡(jiǎn)介： 本軟件是關(guān)于MAX338, MAX339的英文數(shù)據(jù)手冊(cè)：MAX338, MAX339?? 8通道/雙4通道、低泄漏、CMOS模擬多路復(fù)用器 The MAX338/MAX339 are monolithic, CMOS analog multiplexers (muxes). The 8-channel MAX338 is designed to connect one of eight inp...
上傳時(shí)間： 2013-11-12
上傳用戶：18711024007
資源簡(jiǎn)介：A major societal challenge for the decades to come will be the delivery of effective medical services while at the same time curbing the growing cost of healthcare. It is expected that new concepts-particularly electronically assisted healt...
上傳時(shí)間： 2017-02-06
上傳用戶：linyj
資源簡(jiǎn)介：This effort started as an answer to the numerous questions the authors have repeatedly had to answer about electrostatic discharge (ESD) Protection and input/output (1/0) designs. in the past no comprehensive book existed suffi- ciently cov...
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
資源簡(jiǎn)介：in the seven years since the first edition of this book was completed, Electrostatic Discharge (ESD) phenomena in integrated circuits (IC) continues to be important as technologies shrink and the speed and size of the chips increases. The p...
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
資源簡(jiǎn)介：The goal of this book is to introduce the simulation methods necessary to describe the behaviour of semiconductor devices during an electrostatic discharge (ESD). The challenge of this task is the correct description of semiconductor device...
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
資源簡(jiǎn)介：TION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. WARNinG! Although the AD7008 features proprietary ...
上傳時(shí)間： 2014-01-12
上傳用戶：2467478207
資源簡(jiǎn)介：The phenomenon of electrostatic discharge (ESD) has been known for a long time, but recently a growing interest has been observed in ESD in radio frequency (RF) technology and ESD issues in RF applications.
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
資源簡(jiǎn)介：This paper reviews key factors to practical ESD Protection design for RF and analog/mixed-signal (AMS) ICs, including general challenges emerging, ESD-RFIC interactions, RF ESD design optimization and prediction, RF ESD design characterizat...
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
資源簡(jiǎn)介：This text, ESD BasICs: From Semiconductor Manufacturing to Product Use was initiated on the need to produce a text that addresses fundamentals of electrostatic discharge from the manufacturing environment to today’s products. As the manufa...
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
資源簡(jiǎn)介：Abstract: As industrial control systems (ICss) have become increasingly connected and use more off-the-shelfcomponents, new vulnerabilities to cyber attacks have emerged. This tutorial looks at three types of ICss:programmable logic control...
上傳時(shí)間： 2013-10-09
上傳用戶：woshinimiaoye
資源簡(jiǎn)介：16 relay output channels and 16 isolated digital input channels LED indicators to show activated relays Jumper selectable Form A/Form B-type relay output channel Output status read-back Keep relay output values when hot system r...
上傳時(shí)間： 2016-02-15
上傳用戶：dongbaobao
資源簡(jiǎn)介：Guideline Suggestion for High-Speed I/O ESD Protection
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
資源簡(jiǎn)介：This book is either ambitious, brave, or reckless approaching a topic as rapidly evolving as industrial control system (ICs) security. From the advent of ICs-targeted malicious software such as Stuxnet to the advanced persistent threats pos...
上傳時(shí)間： 2020-06-10
上傳用戶：shancjb
資源簡(jiǎn)介：The CAT28LV64 is a low voltage, low power, CMOS Parallel EEPROM organized as 8K x 8?bits. It requires a simple interface for in?system programming. On?chip address and data latches, self?timed write cycle with auto?clear and VCC power ...
上傳時(shí)間： 2013-11-16
上傳用戶：浩子GG
資源簡(jiǎn)介：The CAT25128 is a 128?Kb Serial CMOS EEPROM device internally organized as 16Kx8 bits. This features a 64?byte page write buffer and supports the Serial Peripheral interface (SPI) protocol. The device is enabled through a Chip Select (CS)...
上傳時(shí)間： 2013-11-15
上傳用戶：fklinran
資源簡(jiǎn)介：Part1 of CPRM association document, CPRM is used in copyright Protection, which is necessary in SD system
上傳時(shí)間： 2014-12-21
上傳用戶：zsjzc
資源簡(jiǎn)介：clear CMOS momory in delphi source
上傳時(shí)間： 2015-12-11
上傳用戶：han_zh
資源簡(jiǎn)介：保護(hù)模式教程源碼 The source code of Protection mode in dos
上傳時(shí)間： 2013-12-24
上傳用戶：siguazgb
資源簡(jiǎn)介：Failure analysis is invaluable in the learning process of electrostatic discharge (ESD) and electrical overstress (EOS) Protection design and development [1–8]. in the failure analysis of EOS, ESD, and latchup events, there are a number of...
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
資源簡(jiǎn)介：Dear Reader, this book project brings to you a unique study tool for ESD Protection solutions used in analog-integrated circuit (IC) design. Quick-start learning is combined with in-depth understanding for the whole spectrum of cross- disci...
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
資源簡(jiǎn)介：The mature CMOS fabrication processes are available in many IC foundries. It is cost-effective to leverage the existing CMOS fabrication technologies to implement MEMS devices. On the other hand, the MEMS devices could also add values to th...
上傳時(shí)間： 2020-06-06
上傳用戶：shancjb
資源簡(jiǎn)介：電子元器件抗ESD技術(shù)講義:引 言 4 第1 章 電子元器件抗ESD損傷的基礎(chǔ)知識(shí) 5 1.1 靜電和靜電放電的定義和特點(diǎn) 5 1.2 對(duì)靜電認(rèn)識(shí)的發(fā)展歷史 6 1.3 靜電的產(chǎn)生 6 1.3.1 摩擦產(chǎn)生靜電 7 1.3.2 感應(yīng)產(chǎn)生靜電 8 1.3.3 靜電荷 8 1.3.4 靜電勢(shì) 8 1....
上傳時(shí)間： 2013-07-13
上傳用戶：2404
