The PW2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection orin other Switching application
標簽： pw2302a
上傳時間： 2022-02-11
上傳用戶：
The PW2300S3 uses advanced trench technology to provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection orin other Switching application
標簽： pw2300s3
上傳時間： 2022-02-11
上傳用戶：canderile
The PW8205A8TS is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the small power switching and loadswitch applications. The meet the RoHS and Product requirement with full function reliabilityapproved .
標簽： 8205a8
上傳時間： 2022-02-14
上傳用戶：wangshoupeng199
The PW8205A6S uses advanced trench technology to provide excellent RDS(ON), low gate chargeand operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protectionor in other Switching application.
標簽： 8205a6
上傳時間： 2022-02-14
上傳用戶：
Single chip TFT-LCD Controller/Driver with On-chip Frame Memory (FM) Display Resolution: 240*RGB (H) *320(V) Frame Memory Size: 240 x 320 x 18-bit = 1,382,400 bits LCD Driver Output Circuits- Source Outputs: 240 RGB Channels- gate Outputs: 320 Channels- Common Electrode Output Display Colors (Color Mode)- Full Color: 262K, RGB=(666) max., Idle Mode Off- Color Reduce: 8-color, RGB=(111), Idle Mode On Programmable Pixel Color Format (Color Depth) for Various Display Data input Format- 12-bit/pixel: RGB=(444)- 16-bit/pixel: RGB=(565)- 18-bit/pixel: RGB=(666) MCU Interface- Parallel 8080-series MCU Interface (8-bit, 9-bit, 16-bit & 18-bit)- 6/16/18 RGB Interface(VSYNC, HSYNC, DOTCLK, ENABLE, DB[17:0])- Serial Peripheral Interface(SPI Interface)- VSYNC Interface
上傳時間： 2022-03-04
上傳用戶：
設計功率MOSFET驅動電路時需重點考慮寄生參數對電路的影響。米勒電容作為MOSFET器件的一項重要參數,在驅動電路的設計時需要重點關注。重點觀察了MOSFET的開通和關斷過程中柵極電壓、漏源極電壓和漏源極電流的變化過程,并分析了米勒電容、寄生電感等寄生參數對漏源極電壓和漏源極電流的影響。分析了柵極電壓在米勒平臺附近產生振蕩的原因,并提出了抑制措施,對功率MOSFET的驅動設計具有一定的指導意義。When designing the drive circuit of power MOSFET,the influence of parasitic parameters on the circuit should be concerned.As an important parameter of MOSFET device,Miller capacitance should be considered in the design of drive circuit.The variation of gate voltage,drain source voltage and drain source current during the turn-on and turn-off of MOSFET were observed.The influences of parasitic parameters such as Miller capacitance and parasitic inductance on drain source voltage and drain source current were analyzed.The reasons of gate voltage oscillation nearby Miller plateau were analyzed,and the restraining measures were put forward.This research was instructive for the drive design of power MOSFET.
標簽： mosfet
上傳時間： 2022-04-02
上傳用戶：默默
電學中的測量技術涉及范圍非常廣,電流測量在電學計量中占有非常重要的位置。如何精確地進行電流測量是精密測量的一大難題。傳統的電流檢測電路多采用運算放大芯片與片外電流檢測電路相結合的方式,電路集成度很低,需要較多的接口和資源才能完成對電路的檢測。本文把所有電路部分都集成在一塊芯片上,包括檢測電阻,運算放大器電路及模擬轉數字轉換電路,從而在電路內部可以進行電流檢測,使電路更好的集成化。前置電路使用二級共源共柵結構的運算放大器,減小溝道長度調制效應造成的電流誤差。10位SAR ADC中采用電容驅動能力強的傳輸門保證了模數轉化器的有效精度。比較器模塊采用再生鎖存器與遲滯比較器作為基礎單元組合解決精密測量的問題。本設計可以作為嵌入芯片內的一小部分而檢測芯片中的微小電流1mA~100mA,工作電壓在1.8v左右,電流檢測精度預期達到10uA的需求。The measurement technology in electricity involves a wide range,and current measurement plays a very important position in electrical measurement.How to accurately measure current is a big problem in precision measurement. The traditional current detecting circuit adopts the combination of the operational amplifier chip and theoff-chip current detecting circuit, The circuit integration is very low, and more interfaces and resources are needed tocomplete the circuit detection.This topic integrates all the circuit parts into one chip, including detection resistance, operational amplifier circuit andanalog to digital conversion circuit. Highly integrated circuit makes the external resources on the chip more intensive,so that current detection can be carried out inside the circuit, so that the circuit can be better integrated. Thefront-end circuit of this project uses two-stage cascade operational amplifier and cascade tube to reduce the currenterror caused by channel length modulation effect. In 10-bit SAR ADC, the transmission gate with strong capacitivedriving ability ensures the effective accuracy of the analog-to-digital converter. Comparator module uses regenerativelatch and hysteresis comparator as basic unit to solve the difficult problem of precision measurement. This topic can beused as a small part of the embedded chip to detect the micro-current in the chip 1 mA~100 mA, the working voltageis about 1.8v, and the current detection accuracy is expected to reach the requirement of 10 uA.
上傳時間： 2022-04-03
上傳用戶：
為解決移相全橋電路驅動及相角控制問題,設計了一種數字控制的移相全橋驅動電路.以TPL521為光耦隔離、IR2110為柵極驅動芯片.由DSP產生PWM信號,經過光耦隔離和邏輯電路后送至IR2110進行相角控制.文章對IR2110驅動電路原理進行分析及參數進行設計,對TMS320F28335進行設置并給出部分代碼.實驗結果表明：通過TMS320F28335可產生的不同相角的PWM波形,滿足了移相全橋對不同相角控制的要求.In order to solve the problem of phase-shifted full-bridge circuit driving and phase angle control,a digitally controlled phaseshifted full-bridge driving circuit was designed. TPL521 optocoupler isolation,IR2110 gate driver chip. PWM signals are generated by the DSP and sent to the IR2110 for phase angle control after optocoupler isolation and logic circuits. This text carries on the analysis to the principle of IR2110 drive circuit and parameter design,set up and give out some code to TMS320F28335. The experimental results show that the PWM waveforms with different phase angles generated by TMS320F28335 can meet the requirements of phase-shifted full-bridge control for different phase angles.
上傳時間： 2022-05-03
上傳用戶：zhanglei193
此設計為30W 小型化壁式Type C PD 充電器，使用TI UCC28780 搭配Navitas NV6252來實現小型化需求，UCC28780是一款高頻有源箝位反激式控制器(ACF)，工作頻率可達1MHz，可操作在零電壓開關（ZVS）且能在寬電壓工作范圍內實現，具有先進的自動調諧技術，自適應死區時間優化和可變開關頻率控制律。使用自適應多模控制可根據輸入和輸出條件改變操作，可在降低可聽噪聲的同時實現高效率。NV6252為Navitas推出的一款非對稱半橋GanFet適用于ACF架構，內含gate drive可降低在高頻操作時帶來的雜訊影響，與Si MOSFET相比具有的優勢，包括超低輸入和輸出電容，零反向恢復，降低開關損耗多。 這些優勢可實現密集且高效的拓撲結構。
上傳時間： 2022-06-01
上傳用戶：
三菱電機功率器件在工業、電氣化鐵道、辦公自動化、家電產品等多種領域的電力變換及電動機控制中得到廣泛應用。為了真正滿足市場對裝置噪音低、效率高、體積小、重量輕、精度高、功能強、容量大的要求，三菱電機積極致力于新型器件的研究、開發，為人類的節能和環保不斷努力。第5代IGBT和IPM模塊均采用三菱電機第5代IGBT硅片CSTBTIM技術，并具有正溫度系數特征，與傳統的溝槽型構造IGBT相比，降低了集電極一發射極間飽和電壓，從而實現了更低損耗。同時改進了封裝技術，大大減小了模塊內部分布電感。本應用手冊的出版，旨在幫助用戶了解第5代IGBT和IPM模塊的特性和工作原理，更加方便的使用三菱電機的半導體產品。三菱電機謹向所有購買和支持三菱半導體產品的用戶表示誠摯的感謝。1.IGBT模塊的一般認識1.1 NF系列IGBT模塊的特點NF系列IGBT模塊主要具有以下兩大特點：1，采用第5代IGBT硅片在溝槽型IGBT的基礎上增加電荷蓄積層的新結構（CSTBT）改善了關斷損耗（Eoff）和集電極-發射極問飽和電壓VEisat的折衷。插入式組合元胞（PCM）的使用增強了短路承受能力（SCSOA）并降低了柵極電容，從而降低驅動功率。CSTBT:Carrier Stored Trench-gate Bipolar Transistor載流子存儲式溝槽硼型雙極晶體臂
標簽： igbt
上傳時間： 2022-06-19
上傳用戶：shjgzh
